| PART |
Description |
Maker |
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| TSH69001 TSH690_01 TSH690 TSH690ID TSH690IDT |
40MHZ TO 1GHZ AMPLIFIER
40MHz to 1GHz AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| RF6100-4PCBA RF6100-4 |
3 V 1900 MHz Linear Power Amplifier Module
3V 1900MHZ LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| RF3300-3PCBA RF3300-3 |
3 V 1900 MHz Linear Amplifier Module
3V 1900MHz LINEAR AMPLIFIER MODULE
|
RF Micro Devices
|
| D2213UK D2213 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
|
SEME-LAB[Seme LAB]
|
| AP163-317 |
AP163-317:3.3 V. 802.11b/g Linear Power Amplifier|Power Amplifiers for WLAN
3.3 V, 802.11b/g Linear Power Amplifier
802.11 b/g Linear Power Amplifer
|
Skyworks Solutions Inc.
|
